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參數(shù)資料
| 型號(hào)： | STK12C68-IM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CMOS nvSRAM 8K x 8 AutoStore Nonvolatile Static RAM Industrial Temperature/Military Screen |
| 中文描述： | 的CMOS非易失8K的× 8自動(dòng)存儲(chǔ)非易失性靜態(tài)RAM工業(yè)溫度/軍事屏幕 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | STK12C68-IM |
45
STK12C68-IM
Note e: These parameters guaranteed but not tested.
Note n: HSB is an I/O that has a weak internal pullup; it is basically an open drain output. It is meant to allow up to 32 STK12C68-IMs to be ganged together for
simultaneous storing. Do not use HSB to pullup any external circuitry other than other STK12C68 HSB pins.
Note o: A RECALL cycle is initiated automatically at power up when V
CC
exceeds V
SWITCH
. t
RESTORE
is measured from the point at which V
CC
exceeds 4.5V.
HARDWARE STORE/RECALL
MODE SELECTION
H
L
L
L
X
H
L
H
H
H
H
H
X
X
X
Not Selected
Read SRAM
Write SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile STORE
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile RECALL
STORE/Inhibit
Output High Z
Output Data
Input Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Output High Z
Standby
Active
Active
Active
l
0000
1555
0AAA
1FFF
10F0
0F0F
0000
1555
0AAA
1FFF
10F0
0F0E
X
k,l
k,l
k,l
k,l
k,l
k
k,l
k,l
k,l
k,l
k,l
k
m
L
H
H
Active
X
X
L
I
CC2
/Standby
NONVOLATILE MEMORY OPERATION
E
W
HSB
A
12
- A
0
(hex)
MODE
I/O
POWER
NOTES
Note k:
The six consecutive addresses must be in order listed - (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a STORE cycle or (0000, 1555, 0AAA, 1FFF, 10F0,
0F0E) for a RECALL
cycle. W must be high during all six consecutive cycles. See STORE
cycle
and
RECALL
cycle
tables and diagrams for further details.
I/O state assumes that G
≤
V
IL
. Activation of nonvolatile cycles does not depend on the state of G.
Note m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE(if any) completes, the
part will go into standby mode inhibiting all operation until HSB rises.
HARDWARE STORE/RECALL
SYMBOLS
NO.
PARAMETER
Note l:
MIN
MAX
UNITS
NOTES
22
t
RECALL
RECALL Cycle Duration
20
μ
s
Note o
23
t
STORE
t
HLHH
STORECycle Duration
10
ms
V
CC
≥
4.5V
24
t
DELAY
t
HLQZ
HSB Low to Inhibit On
1
μ
s
25
t
RECOVER
t
HHQX
HSB High to Inhibit Off
700
ns
Note e
26
t
ASSERT
t
HLHX
External STORE Pulse Width
250
ns
Note e
V
SWITCH
Low Voltage Trigger Level
4.0
4.5
V
I
HSB_OL
HSB Output Low Current
3
mA
HSB = V
OL
, Note e, n
I
HSB_OH
HSB Output High Current
5
60
μ
A
HSB = V
IL
, Note e, n
HSB
W
RECALL
STORE
SRAM
Inhibit
Software STORE
HSB Initiated STORE
Power Down STORE
Brown Out RECALL
Power Up RECALL
V
SWITCH
V
CAP
24
t
DELAY
26
t
ASSERT
22
t
RECALL
24
t
DELAY
25
t
RECOVER
23
t
STORE
23
t
STORE
23
t
STORE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK12C68-L35 | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-L351 | 制造商:Cypress Semiconductor 功能描述: |
| STK12C68-L35I | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-L45 | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK12C68-L45I | 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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