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參數(shù)資料
| 型號(hào)： | STH15NB50FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 500V-0.33Ω-14.6A - TO-247/ISOWATT218 PowerMESHTM MOS Transistors(Ｎ溝道ＭＯＳＦＥＴ) |
| 中文描述： | N溝道500V -0.33Ω- 14.6A - TO-247/ISOWATT218 PowerMESHTM MOS晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 109K |
| 代理商： | STH15NB50FI |
STW15NB50
STH15NB50FI
N-CHANNEL 500V - 0.33
- 14.6A -
T0-247/ISOWATT218 PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.33
I
EXTREMELY HIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW15NB50
STH15NB50FI
500
500
±
30
10.5
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
V
V
V
A
A
A
W
14.6
9.2
58.4
190
0.64
6.6
58.4
80
1.52
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
4
4000
-65 to 150
150
TYPE
V
DSS
R
DS(on)
< 0.36
<
0.36
I
D
STW15NB50
STH15NB50FI
500 V
500 V
14.6 A
10.5 A
June 1998
1
2
3
TO-247
ISOWATT218
1
2
3
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STW15NB50 | N-Channel 500V-0.33Ω-14.6A - TO-247/ISOWATT218 PowerMESHTM MOS Transistors(Ｎ溝道ＭＯＳＦＥＴ) |
| STH16NA40FI | N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ溝道功率ＭＯＳ晶體管) |
| STW16NA40 | N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ溝道功率ＭＯＳ晶體管) |
| STH18NB40FI | N-Channel 400V-0.19Ω-18.4A- TO-247/ISOWATT218 PowerMESHTM MOSFET(N溝道MOSFET) |
| STH6N100FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STH16002 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC |
| STH16002A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 5A I(C) | TO-218AC |
| STH16004 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC |
| STH16006 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 8A I(C) | TO-218AC |
| STH16006A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 8A I(C) | TO-218AC |
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