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參數(shù)資料
| 型號(hào)： | STGP3NB60HDFP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT |
| 中文描述： | N溝道3A條- 600V的IGBT的TO-220/FP PowerMESH |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 104K |
| 代理商： | STGP3NB60HDFP |
STGP3NB60HD
STGP3NB60HDFP
N-CHANNEL 3A - 600V TO-220/FP
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
I
CO-PACKAGEDWITH TURBOSWITCH
ANTIPARALLELDIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
CES
V
CE(sat)
I
C
3 A
3 A
STGP3NB60HD
STGP3NB60HDFP
600 V
600 V
< 2.8 V
< 2.8 V
June 1999
1
2
3
TO-220
TO-220FP
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STGP7NB60HD
600
±
20
6
3
24
70
0.56
STGP7NB60HDFP
600
±
20
6
3
24
35
0.28
-65 to 150
150
V
CES
V
GE
I
C
I
C
I
CM
(
)
P
tot
Collector-Emitter Voltage (VGS = 0)
Gate-Emitter Voltage
Collector Current (continuous) at Tc = 25
o
C
Collector Current (continuous) at Tc = 100
o
C
Collector Current (pulsed)
Total Dissipation at Tc = 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by max. junction temperature
V
V
A
A
A
W
W/
o
C
o
C
o
C
T
stg
T
j
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGP3NB60H | N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT |
| STGP3NB60 | N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT |
| STGP3NB60KDFP | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP3NB60K | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP3NB60KD | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGP3NB60K | 功能描述:IGBT 晶體管 N-Ch 600 Volt 6 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP3NB60KD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 6 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP3NB60KDFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP3NB60M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGP3NB60MD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT |
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