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參數(shù)資料
| 型號： | STGF10NB60SD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 10A - 600V TO-220FP PowerMESH? IGBT |
| 中文描述： | N溝道10A條- 600V到- 220FP PowerMESH？ IGBT的 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 325K |
| 代理商： | STGF10NB60SD |
STGF10NB60SD
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| STGP7NB60HD | N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT |
| STGP7NB60KD | N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH⑩ IGBT |
| STGW12NB60HD | N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGF10NB60SD_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT |
| STGF10NC60HD | 功能描述:IGBT 晶體管 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGF10NC60KD | 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGF10NC60KD_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT |
| STGF10NC60SD | 功能描述:IGBT 晶體管 10 A-600 V fast IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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