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參數(shù)資料
| 型號： | STGE200NB60S |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT |
| 中文描述： | N溝道150A - 600V的- 1000V的集電極IGBT的PowerMESH⑩ |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 334K |
| 代理商： | STGE200NB60S |
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STGE200NB60S
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| STGP7NB60FD | N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH? IGBT |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGE50NB60HD | 功能描述:IGBT N-CHAN 600V 50A ISOTOP RoHS:是 類別:半導體模塊 >> IGBT 系列:PowerMESH™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| STGE50NC60VD | 功能描述:IGBT 晶體管 N-chnl 50A-600V PowerMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGE50NC60WD | 功能描述:IGBT 晶體管 N-Ch 600volt 50 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGF10H60DF | 制造商:STMicroelectronics 功能描述:IGBT 600V 20A 30W TO220FP 制造商:STMicroelectronics 功能描述:SADA_600 V, 10 A high speed trench gate field-stop IGBT |
| STGF10NB60SD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 10 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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