參數(shù)資料
型號： STGD7NB60S
廠商： 意法半導體
英文描述： N-Channel 7A-600V- DPAK PowerMESH IGBT(N溝道絕緣柵雙極晶體管)
中文描述： N溝道第7A - 600V的IGBT的DPAK封裝PowerMESH（不適用溝道絕緣柵雙極晶體管）
文件頁數(shù)： 1/8頁
文件大?。?/td> 89K
代理商： STGD7NB60S
STGD7NB60S
N-CHANNEL 7A - 600V - DPAK
Power MESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
VERY LOW ON-VOLTAGE DROP (V
cesat
)
I
HIGH CURRENT CAPABILITY
I
OFFLOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequencyapplications (<1kHz).
with
outstanding
APPLICATIONS
I
LIGHT DIMMER
I
STATIC RELAYS
I
MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
600
V
20
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
±
20
15
V
A
I
C
7
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
60
A
55
W
0.4
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
-40 to 150
TYPE
V
CES
V
CE(sat)
I
C
7 A
STGD7NB60S
600 V
< 1.6 V
October 1998
1
3
DPAK
TO-252
(Suffix ”T4”)
1/8
相關PDF資料
PDF描述
STGP10N60L N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
STGP10N60 TERMINAL
STGP10NB60SDFP N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
STGP10NB60SFP N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
STGP10NB60S N-Channel 10A-600V- TO-220 PowerMESHTM IGBT(N溝道絕緣柵雙極晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
STGD7NB60ST4 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD7NC60H 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 25A DPAK
STGD7NC60HT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 14 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD8NC60K 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT
STGD8NC60KD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 8 A - short circuit rugged IGBT
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