參數(shù)資料
型號： STGB10NB37LZT4
英文描述： Transient Surge Protection Thyristor; Thyristor Type:Sidac; Current, It av:2.2A; Package/Case:TO-92; Capacitance:100pF; Current Rating:2.2A; Forward Voltage:6V; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole RoHS Compliant: NA
中文描述： 晶體管| IGBT的|正陳|甲一（c）|至263AB
文件頁數(shù)： 1/10頁
文件大?。?/td> 156K
代理商： STGB10NB37LZT4
1/10
June 2001
STGB10NB37LZ
N-CHANNEL CLAMPED 20A - D2PAK
INTERNALLY CLAMPED PowerMesh
IGBT
I
POLYSILICON GATE VOLTAGE DRIVEN
I
LOW THRESHOLD VOLTAGE
I
LOW ON-VOLTAGE DROP
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest highvoltage technology basedon a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
I
AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Reverse Battery Protection
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuos) at T
C
= 100
°
C
I
CM
Collector Current (pulse width < 100
μ
s)
P
TOT
Total Dissipation at T
C
= 25
°
C
TYPE
V
CES
V
CE(sat)
I
C
STGB10NB37LZ
CLAMPED
< 1.8
V
20 A
Parameter
Value
Unit
CLAMPED
V
18
V
CLAMPED
V
20
A
60
A
125
W
Derating Factor
0.83
W/
°
C
KV
E
SD
ESD (Human Body Model)
4
T
stg
Storage Temperature
–65 to 175
°
C
°
C
T
j
Max. Operating Junction Temperature
175
D2PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STGB3NB60HDT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Current, It av:2.2A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Capacitance:45pF; Current Rating:2.2A; Forward Current:5A
STGB3NB60MD N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGB3NB60MDT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA
STGP3NB60MD N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGP7NB60MD N-CHANNEL 7A - 600V TO-220/D2PAK POWERMESH IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB10NB40LZ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
STGB10NB40LZT4 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB10NB60S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
STGB10NB60ST4 功能描述:IGBT 晶體管 N Ch 10A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB10NC60HD 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 20A D2PAK
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