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參數(shù)資料
| 型號(hào)： | STD888T4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Medium Current, High Performance, Low Voltage PNP Transistor |
| 中文描述： | 中等電流，高性能，低電壓PNP晶體管 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | STD888T4 |
Electrical characteristics
STD888T4
4/10
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Note (2) Pulsed duration = 300
μ
s, duty cycle
≤
1.5%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector cut-off current
(I
E
=0)
V
CB
= -30V
V
CB
= -30V; T
C
= 100°C
-10
100
μ
A
μ
A
I
EBO
Emitter cut-off current
(I
C
=0)
V
EB
= -6V
-10
μ
A
V
(BR)CEO (2)
Collector-emitter
breakdown voltage
(I
B
=0)
I
C
= -10mA
-30
V
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
=0)
I
C
= -100
μ
A
-45
V
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
=0)
I
E
= -100
μ
A
-6
V
V
CE(sat) (2)
Collector-emitter
saturation voltage
I
C
= -0.5A I
B
= -5mA
I
C
= -2A I
B
= -50mA
I
C
= -5A I
B
= -250mA
I
C
= -6A I
B
= -250mA
I
C
= -8A I
B
= -400mA
I
C
= -10A I
B
= -500mA
-0.7
-1
-1.2
-0.15
-0.35
-0.7
V
V
V
V
V
V
V
BE(sat) (2)
Base-emitter saturation
voltage
I
C
= -2A I
B
= -50mA
I
C
= -6A I
B
= -250mA
-1.2
-1.1
V
V
h
FE (2)
DC current gain
I
C
= -10mA V
CE
= -1V
I
C
= -500mA V
CE
= -1V
I
C
= -5A V
CE
= -1V
I
C
= -5A V
CE
= -1V
T
C
= 100°C
I
C
= -8A V
CE
= -1V
I
C
= -10A V
CE
= -1V
120
100
70
200
200
100
100
55
35
300
t
d
t
r
t
s
t
f
Resistive load
Delay time
Rise time
Storage time
Fall time
I
C
= -3A V
CC
= -20V
I
B1 = -
I
B2 =
-60mA
(see figure 7)
180
160
250
80
220
210
300
100
ns
ns
ns
ns
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