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參數(shù)資料
| 型號(hào)： | STD7NB20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 95K |
| 代理商： | STD7NB20 |
STD7NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
=0.3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
FOR TROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
December 1997
1
3
DPAK
TO-252
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
200
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
200
V
V
GS
±
30
V
I
D
7
A
I
D
5
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
28
A
P
tot
55
W
Derating Factor
0.44
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
5.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
(
1
) I
SD
≤
7A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.40
I
D
STD7NB20
200 V
7 A
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD7NB20-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH⑩ MOSFET |
| STD7NB20T4 | 制造商:STMicroelectronics 功能描述: |
| STD7NK30Z | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD7NK40 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD7NK40Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
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