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參數(shù)資料
| 型號： | STD7NS20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 200V-0.35Ω-7A-DPAK MESH OVERLAY MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道200伏-0.35Ω- 7A條，網(wǎng)眼密胺DPAK封裝MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | STD7NS20 |
STD7NS20
N - CHANNEL 200V - 0.35
- 7A - DPAK
MESH OVERLAY
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.35
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY
process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
I
HIGH CURRENT SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
November 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
200
200
±
20
7
4.4
28
45
0.37
5
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
7A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
dv/dt(
1
)
T
stg
T
j
TYPE
V
DSS
200 V
R
DS(on)
< 0.40
I
D
7 A
STD7NS20
1
3
DPAK
TO-252
(Suffix "T4")
1/5
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