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參數(shù)資料
| 型號： | STD60NH03LT4 |
| 廠商： | 意法半導體 |
| 英文描述： | RSNTR 14.74MHZ 10PF 0.7% CER SMD-3.4X7.4 -40+85C T&R |
| 中文描述： | N溝道30V的- 0.0075糯-第60A條的DPAK /像是iPak STripFET第三功率MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 534K |
| 代理商： | STD60NH03LT4 |
3/12
STD60NH03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
Pulse width limited by safe operating area
(3)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
2
) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 20V
(4)
Gate charge for synchronous operation
.
See Appendix A
.
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 5 V
21
95
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V I
D
= 60 A V
GS
= 5 V
15.7
8.3
3.4
21
nC
nC
nC
Q
gls(4)
Third-quadrant Gate Charge
V
DS
< 0 V V
GS
= 10 V
15
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
= 15 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 5 V
19
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
Forward On Voltage
I
SD
= 30 A V
GS
= 0
1.4
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
V
DD
= 20 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
32
51
3.2
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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