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參數(shù)資料
| 型號： | STD60NH03LT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RSNTR 14.74MHZ 10PF 0.7% CER SMD-3.4X7.4 -40+85C T&R |
| 中文描述： | N溝道30V的- 0.0075糯-第60A條的DPAK /像是iPak STripFET第三功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 534K |
| 代理商： | STD60NH03LT4 |
1/12
October 2003
STD60NH03L
N-CHANNEL 30V - 0.0075
- 60A DPAK/IPAK
STripFET III POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0075
@ 10 V
I
TYPICAL R
DS
(on) = 0.009
@ 5 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD60NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
SALES TYPE
STD60NH03LT4
STD60NH03L-1
TYPE
V
DSS
R
DS(on)
I
D
STD60NH03L
30 V
< 0.009
60 A
MARKING
D60NH03L
D60NH03L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM(1)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Parameter
Value
30
30
± 20
60
43
240
70
0.47
300
Unit
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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