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參數(shù)資料
| 型號(hào)： | STD60NF3LL |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道30V的- 0.0075ohm -第60A條的DPAK STripFET⑩二功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 452K |
| 代理商： | STD60NF3LL |
1/9
April 2002
STD60NF3LL
N-CHANNEL 30V - 0.0075
- 60A DPAK
STripFET II POWER MOSFET
(1) Starting T
j
=25
°C, I
D
=30A, V
DD
=27.5V
I
TYPICAL R
DS
(on) = 0.0075
I
OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This application specific Power Mosfet is the third
genaration of STMicroelectronics unique “Single
Feature Size
”
strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance ang gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD60NF3LL
30V
<0.0095
60A
Parameter
Value
Unit
30
V
30
V
± 16
V
60
A
43
A
240
A
100
W
0.67
W/°C
700
mJ
– 55 to 175
°C
DPAK
1
3
TO-252
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD60NF3LL_06 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:N-channel 30V - 0.0075ヘ - 60A - DPAK STripFET⑩ II Power MOSFET |
| STD60NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD60NF55L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 55V - 0.012ヘ - 60A - DPAK/IPAK STripFET⑩ II Power MOSFET |
| STD60NF55L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 55V - 0.012ヘ - 60A - DPAK/IPAK STripFET⑩ II Power MOSFET |
| STD60NF55L-1 | 制造商:ST 功能描述:LOW VOLTAGE POWER MOSFET |
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