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參數(shù)資料
| 型號： | STD60NF06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.014ohm - 60A章的DPAK STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 461K |
| 代理商： | STD60NF06 |
1/9
October 2002
STD60NF06
N-CHANNEL 60V - 0.014
- 60A DPAK
STripFET II POWER MOSFET
(1) I
SD
≤
60A, di/dt
≤
200 A/
μ
s, V
DD
≤
24V, Tj
≤
T
jMAX
I
TYPICAL R
DS
(on) = 0.014
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
I
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD60NF06
60 V
< 0.016
60A
Parameter
Value
Unit
60
V
60
V
± 20
V
60
A
42
A
240
A
110
W
0.73
4
W/°C
V/ns
– 55 to 175
°C
DPAK
(Suffix “T4”)
1
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD60NF3LLT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-252AA |
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| STD60NF3LL | N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET⑩ II POWER MOSFET |
| STD6N10 | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET) |
| STD70NH02L-1 | N-CHANNEL 24V - 0.0062 Ohm - 60A IPAK/DPAK STripFET II Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD60NF06T4 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD60NF3LL | 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC D-PAK 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 30V 60A DPAK |
| STD60NF3LL_06 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:N-channel 30V - 0.0075ヘ - 60A - DPAK STripFET⑩ II Power MOSFET |
| STD60NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD60NF55L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 55V - 0.012ヘ - 60A - DPAK/IPAK STripFET⑩ II Power MOSFET |
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