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參數(shù)資料
| 型號： | STD5NM50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh⑩Power MOSFET |
| 中文描述： | N溝道500V - 0.7ohm - 7.5A的DPAK封裝/像是iPak的MDmesh⑩功率MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 463K |
| 代理商： | STD5NM50 |
3/10
STD5NM50/STD5NM50-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Test Conditions
V
DD
= 250V, I
D
= 2.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 7.5A
V
GS
= 10V
Min.
Typ.
Max.
Unit
16
ns
t
r
Rise Time
8
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
13
nC
Gate-Source Charge
5
nC
Gate-Drain Charge
6
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
14
ns
Fall Time
6
ns
Cross-over Time
13
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
7.5
A
Source-drain Current (pulsed)
30
A
Forward On Voltage
I
SD
= 7.5A, V
GS
= 0
I
SD
= 5A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
185
ns
Reverse Recovery Charge
1.1
μC
Reverse Recovery Current
11.5
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
270
1.6
12
ns
μC
A
Thermal Impedance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD5NM50-1 | 功能描述:MOSFET N-Ch 500 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NM50T4 | 功能描述:MOSFET N-Ch 500 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NM50T4 | 制造商:STMicroelectronics 功能描述:Transistor Polarity:N Channel |
| STD5NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5A DPAK |
| STD5NM60_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK |
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