參數(shù)資料
型號(hào): STD55NH2LLT4
廠商: 意法半導(dǎo)體
英文描述: N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET
中文描述: N溝道24V的- 0.010ohm - 40A條-的DPAK /像是iPak超低柵極電荷STripFET商標(biāo)功率MOSFET
文件頁(yè)數(shù): 9/16頁(yè)
文件大小: 485K
代理商: STD55NH2LLT4
STD55NH2LL - STD55NH2LL-1
Appendix A
9/16
4
Appendix A
The power losses associated with the FETs in a synchronous buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
The low side (SW2) device requires:
Very low R
DS(on)
to reduce conduction losses
Small Qgls to reduce the gate charge losses
Small Coss to reduce losses due to output capacitance
Small Qrr to reduce losses on SW1 during its turn-on
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
voltage to avoid the cross conduction phenomenon;
The high side (SW1) device requires:
Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on
the gate
Small Qg to have a faster commutation and to reduce gate charge losses
Low R
DS(on)
to reduce the conduction losses.
Figure 19.
Buck converter: power losses estimation
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STD5N20L N-CHANNEL 200V - 0.65ヘ - 5A DPAK STripFET⑩ MOSFET
STD5N20LT4 N-CHANNEL 200V - 0.65ヘ - 5A DPAK STripFET⑩ MOSFET
STD60NF55L-1 N-channel 55V - 0.012ヘ - 60A - DPAK/IPAK STripFET⑩ II Power MOSFET
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