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參數(shù)資料
| 型號(hào)： | STD3NM60-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 1.3ohm -第3A TO-220/DPAK/IPAK齊納⑩保護(hù)的MDmesh功率MOSFET |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 548K |
| 代理商： | STD3NM60-1 |
STP4NM60 / STD3NM60 / STD3NM60-1
2/12
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
3A, di/dt
≤
400
μ
A, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP4NM60
STD3NM60
STD3NM60-1
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
4
3
A
2.52
1.9
A
Drain Current (pulsed)
16
12
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
69
42
W
0.55
0.33
W/°C
V/ns
dv/dt (1)
T
j
T
stg
15
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
°C
°C
TO-220
DPAK
IPAK
3
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.82
°C/W
°C/W
°C
62.5
300
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
1.5
Unit
A
200
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NM60N | 功能描述:MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60T4 | 功能描述:MOSFET N-Ch 600 Volt 3 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3PK50Z | 功能描述:MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3PS25 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET |
| STD3PS25-1 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET |
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