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參數(shù)資料
| 型號： | STD3NK50Z-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道500V - 2.8ohm - 2.3a作出TO-92/DPAK/IPAK齊納MOSFET的保護SuperMESH |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 481K |
| 代理商： | STD3NK50Z-1 |
STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP
2/14
Table 3: Absolute Maximum ratings
Symbol
( ) Pulse width limited by safe operating area
(1)
I
D
≤
2 di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
Table 4: Thermal Data
(#) When mounted on 1inch
2
FR4, 2 Oz copper board.
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: GATE-SOURCE ZENER DIODE
Symbol
Parameter
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in-back-to-back Zener diodes have specifically been designed to enchance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
DPAK/IPAK
TO-92
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
±30
V
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
2.3
0.5
A
1.45
0.32
A
Drain Current (pulsed)
9.2
2
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
Gate source ESD (HBM-C=100 pF, R= 1.5K
)
Peak Diode Recovery voltage slope
45
3
W
0.36
0.025
W/
°
C
V
ESD(G-S)
dv/dt (1)
T
j
T
stg
2000
V
4.5
V/ns
Operating Junction Temperature
Storage Temperature
-55 to 150
°
C
DPAK
IPAK
TO-92
--
120
40
Unit
°
C/W
°
C/W
°
C/W
Rthj-case
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
2.77
50 (#)
--
100
--
Maximum Lead Temperature For Soldering Purpose
275
260
°
C
Parameter
Max. Value
2.3
Unit
A
120
mJ
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NK50ZT4 | 功能描述:MOSFET N-Ch 500 Volt 2.3Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NK60Z | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK |
| STD3NK60Z | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK |
| STD3NK60Z-1 | 功能描述:MOSFET N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NK60Z-1 | 制造商:STMicroelectronics 功能描述:MOSFET N I-PAK |
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