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參數資料
| 型號： | STD3NA50T4 |
| 英文描述： | Cartridge Fuse; Current Rating:800mA; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 2.7AI（四）|至252 |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 172K |
| 代理商： | STD3NA50T4 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 125 V
R
G
= 50
(see test circuit, figure 3)
V
DD
= 200 V
R
G
= 50
(see test circuit, figure 5)
V
DD
= 200 V
I
D
= 1.5 A
V
GS
= 10 V
15
45
25
65
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 3 A
V
GS
= 10 V
180
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 3 A
V
GS
= 10 V
16
5
6
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 200 V
R
G
= 50
(see test circuit, figure 5)
I
D
= 3 A
V
GS
= 10 V
15
15
35
25
25
55
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
3
12
A
A
V
SD
(
)
t
rr
I
SD
= 3 A
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3 A
V
DD
= 100 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
180
1.2
13
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD3N25
3/10
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| STD3NB30T4 | Leaded Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.5mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STD3NB50T4 | Leaded Cartridge Fuse; Current Rating:3A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Body Material:Glass; Diameter:4.7mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes; Length:14.48mm |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STD3NB30 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 300V - 1.8ohm - 3.2A - DPAK PowerMESH MOSFET |
| STD3NB30T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3.2A I(D) | TO-252AA |
| STD3NB50 | 功能描述:MOSFET N-CH 500V 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NB50-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:***** BITTE 4969170 VERWENDEN***** |
| STD3NB50T4 | 功能描述:MOSFET N-CH 500V 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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