參數(shù)資料
型號: STD3NC60T4
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.2A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 600V的五(巴西)直| 3.2AI(四)|對252AA
文件頁數(shù): 1/10頁
文件大小: 172K
代理商: STD3NC60T4
STD3N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 1
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH SPEED SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
INDUSTRIAL ACTUATORS
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 2
I
D
STD3N25
250 V
3 A
January 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
250
V
V
DGR
250
±
20
3
V
V
GS
V
I
D
A
I
D
1.9
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
12
A
45
W
Derating Factor
0.36
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
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