參數(shù)資料
型號： STD3N30LT4
英文描述： Cartridge Fuse; Current Rating:600mA; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P
中文描述： 晶體管| MOSFET的| N溝道| 300V五（巴西）直| 3A條（?。﹟至252
文件頁數(shù)： 2/10頁
文件大小： 172K
代理商： STD3N30LT4
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.78
100
1.5
275
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
3
A
E
AS
20
mJ
E
AR
5
mJ
I
AR
1.9
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
250
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
20 V
T
c
= 125
o
C
250
1000
±
100
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 1.5 A
I
D
= 1.5 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
V
GS
= 10V
T
c
= 100
o
C
1
2
4
A
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
3
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.5 A
1
1.8
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
370
60
10
500
100
20
pF
pF
pF
STD3N25
2/10
相關(guān)PDF資料
PDF描述
STD3N30T4 Cartridge Fuse; Current Rating:750mA; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P
STD3NA50-1 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.7A I(D) | TO-251
STD3NM60T4 Leaded Cartridge Fuse; Current Rating:1.5A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.5mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
STD3NA50T4 Cartridge Fuse; Current Rating:800mA; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P
STD3NB30T4 Leaded Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.5mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD3N30T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3A I(D) | TO-252
STD3N40K3 功能描述:MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD3N62K3 功能描述:MOSFET N-channel 620V, 2.7A SuperMESH Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD3N80K5 制造商:STMicroelectronics 功能描述:MOSFET N-CH 800V 2.5A DPAK
STD3NA50 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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