參數(shù)資料
型號： STD3NA50-1
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.7A I(D) | TO-251
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 2.7AI（四）|至251
文件頁數(shù)： 1/10頁
文件大小： 172K
代理商： STD3NA50-1
STD3N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 1
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH SPEED SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
INDUSTRIAL ACTUATORS
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 2
I
D
STD3N25
250 V
3 A
January 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
250
V
V
DGR
250
±
20
3
V
V
GS
V
I
D
A
I
D
1.9
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
12
A
45
W
Derating Factor
0.36
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相關(guān)PDF資料
PDF描述
STD3NM60T4 Leaded Cartridge Fuse; Current Rating:1.5A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.5mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
STD3NA50T4 Cartridge Fuse; Current Rating:800mA; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P
STD3NB30T4 Leaded Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.5mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
STD3NB50T4 Leaded Cartridge Fuse; Current Rating:3A; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Body Material:Glass; Diameter:4.7mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes; Length:14.48mm
STD3NC50-1 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.2A I(D) | TO-251AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD3NA50T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.7A I(D) | TO-252
STD3NB30 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 300V - 1.8ohm - 3.2A - DPAK PowerMESH MOSFET
STD3NB30T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3.2A I(D) | TO-252AA
STD3NB50 功能描述:MOSFET N-CH 500V 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD3NB50-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:***** BITTE 4969170 VERWENDEN*****
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