- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380762 > STD30NF03L (意法半導體) Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Operating Temp. Max:125 C RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | STD30NF03L |
| 廠商： | 意法半導體 |
| 英文描述： | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Operating Temp. Max:125 C RoHS Compliant: Yes |
| 中文描述： | ? -通道30V的- 0.020歐姆- 30A條的DPAK STripFET功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 85K |
| 代理商： | STD30NF03L |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 24 V I
D
= 30 A V
GS
= 5 V
I
D
= 20 A
V
GS
= 4.5 V
35
205
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
7
8
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
I
D
= 20 A
V
GS
= 4.5 V
90
240
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
30
120
A
A
V
SD
(
)
t
rr
I
SD
= 30 A
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 40 A
V
DD
= 15 V
(see test circuit, fig. 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
65
72
2
ns
nC
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area
Thermal Impedance
STD30NF03L
3/8
相關PDF資料 |
PDF描述 |
|---|---|
| STD35NF06T4 | Progress in Power Switching(電源開關改進) |
| STD38NH02LT4 | N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET |
| STD3NC60-1 | N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET |
| STD3NC60 | N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET |
| STD3NK50Z | N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD30NF03L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.020ohm - 30A - DPAK/IPAK STripFET TM II Power MOSFET |
| STD30NF03L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-251AA |
| STD30NF03LT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
| STD30NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NF03LTT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。