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參數(shù)資料
| 型號(hào)： | STD29NF03L-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第29A條（?。﹟對(duì)251AA |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | STD29NF03L-1 |
STD29NF03L
10/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of useof such information nor forany infringement ofpatents or other rights of third parties which may result from itsuse. No license isgranted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express writtenapproval of STMicroelectronics.
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PDF描述 |
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| STD29NF03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-252AA |
| STD2N50T4 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 |
| STD2NA50-1 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-251 |
| STD2NA50T4 | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
| STD2NA60-1 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD29NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 29 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2HNK60Z | 功能描述:MOSFET N Ch 600V Zener SuprMESH 4.4 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2HNK60Z-1 | 功能描述:MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2LN60K3 | 功能描述:MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2N105K5 | 功能描述:MOSFET N-CH 1050V 1.5A DPAK 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:1050V（1.05kV） 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:1.5A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:8 歐姆 @ 750mA， 10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時(shí)的柵極電荷（Qg）:10nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:115pF @ 100V 功率 - 最大值:60W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1 |
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