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參數(shù)資料
| 型號(hào)： | STD25NE03L-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 20A條（?。﹟對(duì)251AA |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | STD25NE03L-1 |
STD25NE03L
N - CHANNEL 30V - 0.019
- 25A - TO-251/TO-252
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.019
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
I
AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG,LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
March 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
30
V
±
20
20**
V
A
I
D
18**
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
100
A
45
W
0.3
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
(**) Value limited only by the package
TYPE
V
DSS
R
DS(on)
< 0.025
I
D
STD25NE03L
30 V
25 A
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD25NE03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252AA |
| STD25NE03L | N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET |
| STD2N50-1 | STD2N50-1 I-PAK MOSFET-TRANSIT |
| STD2N50 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD2NB80-1 | N-Channel 800V-4.6Ω-1.9A- IPAK PowerMESHTM MOSFET(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD25NE03LT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252AA |
| STD25NF10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| STD25NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK |
| STD25NF10L | 制造商:STMicroelectronics 功能描述: |
| STD25NF10LA | 功能描述:MOSFET 100 V Mosfet 35 RDS 25A D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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