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參數(shù)資料
| 型號： | STD20N03L |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 中文描述： | N溝道邏輯E級nhancement F型爾德首頁ffect晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 801K |
| 代理商： | STD20N03L |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 20A
1.3
V
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
C
D
I
D
,
I
D
,
3
R
,
STU/D20N03L
0 5 10 15 20 25 30
900
750
600
450
300
150
0
12
10
8
6
4
2
0
0
2
4
6
8
10
12
-55 C
25 C
20
15
10
5
0
0
1
1.5
2
2.5
3
3.5
Tj=125 C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-55
-25
0
25
125
Tj( C)
V
GS
=10,9,8,7,6,5V
V
GS
=1.5V
Ciss
Coss
Crss
V
GS
=2.5V
1
100
50
75
V
GS
=10V
I
D
=20A
Tj, Junction Temperature ( C)
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