參數(shù)資料
型號(hào): STD12NE06L
廠商: 意法半導(dǎo)體
英文描述: N-Channel 60V-0.09Ω-12A- DPAK SINGLE FEATURE SIZETM Power MOSFET(N溝道功率MOSFET)
中文描述: N溝道60V的-0.09Ω- 12A條,單一的功能SIZETM DPAK封裝功率MOSFET(不適用溝道功率MOSFET的)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 81K
代理商: STD12NE06L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 48 V
I
D
= 8 A
V
GS
= 5 V
17
38
25
50
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 16 A
V
GS
= 5 V
12
6
6
16
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 48 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 16 A
V
GS
= 5 V
9
18
30
12
25
45
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
12
48
A
A
V
SD
(
)
t
rr
I
SD
= 12 A
I
SD
= 16 A
V
DD
= 25 V
(see test circuit, figure 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
70
0.13
4
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for
Thermal Impedance
STD12NE06L
3/8
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