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參數(shù)資料
| 型號： | STD12N06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N溝道增強(qiáng)模式低閾值功率MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式的低閾值功率MOS晶體管（不適用溝道增強(qiáng)模式低閾值功率MOSFET的） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 175K |
| 代理商： | STD12N06L |
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STD12N05L/STD12N06L
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PDF描述 |
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| STD12NE06L | N-Channel 60V-0.09Ω-12A- DPAK SINGLE FEATURE SIZETM Power MOSFET(N溝道功率MOSFET) |
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| STD16NE06L-1 | N-Channel 60V-0.07Ω-16A- TO-251 STripFETTM Power MOSFET(N溝道功率MOSFET) |
| STD16NE06L | N-Channel 60V-0.07Ω-16A- DPAK STripFETTM " Power MOSFET(N溝道功率MOSFET) |
| STD17NF03L-1 | N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD12N06L-1 | 功能描述:MOSFET REORD 511-STD12NF06L TO-251 N-CH 12A 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD12N06LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-252 |
| STD12N06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-252 |
| STD12N10L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR |
| STD12N10T4G | 功能描述:MOSFET N-CH SPCL 100V DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:* 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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