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參數(shù)資料
| 型號(hào)： | STC05DE120HV |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Hybrid emitter switched bipolar transistor ESBT㈢ 1200V - 5A - 0.18 ohm |
| 中文描述： | 混合發(fā)射極開關(guān)雙極晶體管內(nèi)酰胺酶㈢1200伏- 5A條- 0.18歐姆 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 218K |
| 代理商： | STC05DE120HV |
STC05DE120HV
Electrical characteristics
3/9
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Note (1) Pulsed duration = 300
μ
s, duty cycle
≤
1.5%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CS(SS)
Collector-source current
(V
BS
=V
GS
=0V)
V
CS(SS)
=1200V
100
μ
A
I
BS(OS)
Base-source current
(I
C
=0, V
GS
=0V)
V
BS(OS)
=30V
10
μ
A
I
SB(OS)
Source-base current
(I
C
=0, V
GS
=0V)
V
SB(OS)
=9V
100
μ
A
I
GS(OS)
Gate-source leakage
(V
BS
=0V)
V
GS
=
±
20V
500
nA
V
CS(ON)
Collector-source ON
voltage
V
GS
=10V I
C
=5A I
B
=1A
V
GS
=10V I
C
=2.5A I
B
=0.25A
0.9
0.7
1.5
1.2
V
V
h
FE
DC current gain
V
CS
=1V V
GS
=10V I
C
=5A
V
CS
=1V V
GS
=10V I
C
=2.5A
3
7
5
10
V
BS(ON)
Base-source ON
voltage
V
GS
=10V I
C
=5A I
B
=1A
V
GS
=10V I
C
=2.5A I
B
=0.25A
1.3
1
1.7
1.4
V
V
V
GS(th)
Gate threshold voltage
V
BS
=V
GS
I
B
=250
μ
A
1.5
2.2
3
V
C
iss
Input capacitance
V
CS
=25V f =1MHz V
GS
=0V
750
pF
Q
GS(tot)
Gate-source Charge
V
CS
=15V V
GS
=10V
V
CB
=0V I
C
=1.8A
12.5
nC
V
CSW
Maximum collector-
source voltage switched
without snubber
R
G
=47
h
FE
=5 I
C
= 5A
1200
V
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