參數(shù)資料
型號: STB9NK70Z-1
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
中文描述: N溝道高達(dá)700V - 1ohm - 7.5A的TO-220/FP/D2PAK/I2PAK/TO-247齊保護(hù)的SuperMESH⑩功率MOSFET
文件頁數(shù): 14/14頁
文件大?。?/td> 664K
代理商: STB9NK70Z-1
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
14/14
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB9NK70ZFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STB9NK70ZT4 功能描述:MOSFET N-Ch 700 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB9NK80Z 功能描述:MOSFET N-CH 800V D2PAK 制造商:stmicroelectronics 系列:SuperMESH?? 包裝:剪切帶(CT) 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):800V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):5.2A(Tc) 不同?Id,Vgs 時(shí)的?Rds On(最大值):1.8 歐姆 @ 2.6A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):4.5V @ 100μA 不同 Vgs 時(shí)的柵極電荷(Qg):40nC @ 10V 不同 Vds 時(shí)的輸入電容(Ciss):1138pF @ 25V 功率 - 最大值:125W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:TO-263-3,D2Pak(2 引線+接片),TO-263AB 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1
STB9NK90Z 功能描述:MOSFET N Ch 900V 1.1 8A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB9NK90Z_10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH? Power MOSFET