參數(shù)資料
型號(hào)： STB80NF55L-06T4
廠商： 意法半導(dǎo)體
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 80A條（?。﹟對(duì)263AB
文件頁數(shù)： 1/8頁
文件大?。?/td> 85K
代理商： STB80NF55L-06T4
STB80NF55L-06
N - CHANNEL 55V - 0.005
- 80A D
2
PAK
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.005
I
LOW THRESHOLD DRIVE
I
LOGIC LEVEL DEVICE
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
”
strip-based
process.
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
The
Feature
resulting
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
October 1999
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
55
55
±
20
80
57
320
210
1.4
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
J
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area
E
AS
(
1
)
T
stg
T
j
(
1
)
starting T
j
= 25
o
C, I
D
=40A , V
DD
= 30V
TYPE
V
DSS
R
DS(on)
< 0.0065
I
D
STB80NF55L-06
55 V
80 A
1/8
相關(guān)PDF資料
PDF描述
STB80NF55L-08 N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET⑩ II POWER MOSFET
STB80NF55-08-1 N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET
STB80NF55L-06 N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET
STB8NM60D N-CHANNEL 600V - 0.9ヘ - 8A - TO-220/D2PAK Fast Diode MDmesh⑩ Power MOSFET
STB9NK50ZT4 N-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB80NF55L-08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET⑩ II POWER MOSFET
STB80NF55L-08-1 功能描述:MOSFET N-Ch, 55V-0.0065ohms 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB80NF55L-08T4 功能描述:MOSFET N-Ch 55 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB80NF75L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET
STB80NF75L-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET
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