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參數(shù)資料
| 型號(hào)： | STB7NB60T4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.2A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 7.2AI（四）|對(duì)252AA |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 99K |
| 代理商： | STB7NB60T4 |
STB7NB60
N - CHANNEL 600V - 1.0 OMH - 7.2A - I
2
PAK/D
2
PAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 1.0
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
June 1998
123
I
2
PAK
TO-262
(suffix ”-1”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
600
600
±
30
7.2
4.5
28.8
125
1.0
4.5
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
7A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 1.2
I
D
STB7NB60
600 V
7.2 A
1
3
D
2
PAK
TO-252
(Suffix ”T4”)
1/8
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