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參數(shù)資料
| 型號： | STB7NB40 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 60K |
| 代理商： | STB7NB40 |
STB7NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.75
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage technology, SGS-Thomson
has designed an advanced family of power Mosfets with
outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary edge
termination structure, gives the lowest RDS(on) per area,
exceptional
avalanche
and
unrivalled gate charge and switching characteristics.
dv/dt
capabilities
and
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
This ispreliminary information on a new product now in development or undergoing evaluation. Details are subject to changewithout notice.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STB7NB40
V
DS
Drain-source Voltage (V
GS
= 0)
400
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
400
±
30
V
V
GS
V
I
D
I
D
7
A
4.4
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
28
A
P
tot
100
W
Derating Factor
0.8
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
T
stg
Storage Temperature
-65 to 150
o
C
o
C
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
(
1
) I
SD
≤
7A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
October 1997
TYPE
V
DSS
R
DS(on)
< 0.9
I
D
STB7NB40
400 V
7.0 A
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB7NB60-1 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.2A I(D) | TO-262AA |
| STB7NB60T4 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.2A I(D) | TO-252AA |
| STB7NB60 | 30V N-Channel PowerTrench MOSFET |
| STB7NC70ZT4 | N-CHANNEL 700V - 1.1 OHM - 6A TO-220/FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
| STB7NC70Z-1 | N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB7NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET |
| STB7NB60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.2A I(D) | TO-262AA |
| STB7NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB7NC70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB7NC70Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
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