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參數(shù)資料
| 型號： | STB6NC90Z-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道900V - 1.55ohm - 5.4A TO-220/FP/D巴基斯坦/我巴基斯坦齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 532K |
| 代理商： | STB6NC90Z-1 |
3/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 450 V, I
D
= 3 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 720V, I
D
= 6A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
24
ns
t
r
Rise Time
8
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
42
58.8
nC
Gate-Source Charge
13
nC
Gate-Drain Charge
15
nC
Parameter
Test Conditions
V
DD
= 720V, I
D
= 6 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
10
ns
Fall Time
11
ns
Cross-over Time
14
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
5.4
A
Source-drain Current (pulsed)
21.6
A
Forward On Voltage
I
SD
= 6 A, V
GS
= 0
I
SD
= 6 A, di/dt = 100A/μs,
V
DD
= 40 V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
680
ns
Reverse Recovery Charge
7.14
μC
Reverse Recovery Current
21
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
25
Typ.
Max.
Unit
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 50 mA, V
GS
= 0
90
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| STB6NK60Z-1 | 功能描述:MOSFET N-Ch, 600V-1ohm Zener SuperMESH 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB6NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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