參數(shù)資料
型號： STB55NE06L
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強模式功率MOSFET)
中文描述： N溝道增強模式“的單一的功能SIZETM”功率MOSFET（不適用溝道增強模式功率MOSFET的）
文件頁數(shù)： 2/5頁
文件大?。?/td> 54K
代理商： STB55NE06L
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1.15
62.5
0.5
300
o
C/W
oC/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 15 V)
55
A
E
AS
250
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
60
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
=125
o
C
1
10
μ
A
μ
A
nA
I
GSS
V
GS
=
±
15 V
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
1
1.7
2.5
V
R
DS(on)
V
GS
= 5 V I
D
= 27.5 A
V
GS
= 10 V I
D
= 27.5 A
0.022
0.019
0.028
0.022
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
55
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=27.5 A
20
30
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
2800
375
100
3750
500
140
pF
pF
pF
STB55NE06L
2/5
相關(guān)PDF資料
PDF描述
STB55NE06 N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強模式功率MOSFET)
STB55NF06L-1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
STP55NF06L N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STB55NF06L N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STP55NF06LFP N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB55NF03L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET
STB55NF03L-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
STB55NF03LT4 功能描述:MOSFET N-Ch 30 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB55NF06 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 50A D2PAK
STB55NF06_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
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