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參數(shù)資料
| 型號： | STB50NH02L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 24V - 0.011ohm - 50A DPAK STripFET⑩ III POWER MOSFET |
| 中文描述： | N溝道24V的- 0.011ohm - 50A條?巴基斯坦STripFET⑩三功率MOSFET |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 415K |
| 代理商： | STB50NH02L |
3/11
STB50NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
Garanted when external Rg=4.7
and t
< t
.
(4)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2)
Pulse width limited by safe operating area
(5)
Q
oss =
C
oss
*
V
in ,
C
oss =
C
gd +
C
ds .
See Appendix A
(
3
) Starting T
j
= 25
o
C, I
D
= 25A, V
DD
= 18V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
=25 A
V
GS
= 4.5 V
7
62
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
0.44
≤
V
DD
≤
10 V
I
D
=50 A V
GS
=10 V
18
4
2.5
24
nC
nC
nC
Q
oss(5)
Output Charge
V
DS
= 16 V V
GS
= 0 V
6.5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 25 A
V
GS
= 10 V
25
12
16
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
50
200
A
A
V
SD
(4)
Forward On Voltage
I
SD
= 25 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 50 A
V
DD
= 18 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
27
22
1.6
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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