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參數(shù)資料
| 型號： | STB3NC90 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道900V - 3.2W - 3.5A的采用D2PAK齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 418K |
| 代理商： | STB3NC90 |
3/9
STB3NC90Z
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 450 V, I
D
= 1.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 720V, I
D
= 3A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Rise Time
28
ns
t
r
14
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
27
38
nC
Gate-Source Charge
8
nC
Gate-Drain Charge
10
nC
Parameter
Test Conditions
V
DD
= 720V, I
D
= 3 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
16
ns
Fall Time
10
ns
Cross-over Time
18
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
3.5
A
Source-drain Current (pulsed)
14
A
Forward On Voltage
I
SD
= 3 A, V
GS
= 0
I
SD
= 3 A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
712
ns
Reverse Recovery Charge
4450
μC
Reverse Recovery Current
13
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
25
Typ.
Max.
Unit
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 50 mA
90
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| STB3NC90Z-1 | N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
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相關代理商/技術參數(shù) |
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|---|---|
| STB3NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB3NC90Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB3NC90ZT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3.5A I(D) | TO-263AB |
| STB3NK60Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB3NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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