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參數(shù)資料
| 型號(hào)： | STB36NF02LT4 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | THERMISTOR PTC 6V 1.10A RESETABL |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 36A條（丁）|對(duì)263AB |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 205K |
| 代理商： | STB36NF02LT4 |
STB36NF06L STP36NF06L
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB36NF06L | FUSE,1.5A,RESETTABLE,SMDC150 |
| STP3N100XI | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.6A I(D) | SOT-186VAR |
| STP3N50XI | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.7A I(D) | SOT-186VAR |
| STP3N60FI | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.7A I(D) | TO-220VAR |
| STP3N60XI | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.4A I(D) | SOT-186VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB36NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.015 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| STB36NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 36 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB36NF06L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II POWER MOSFET |
| STB36NF06LT4 | 功能描述:MOSFET 60V 0.032Ohm 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB36NM60N | 功能描述:MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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