參數(shù)資料
型號: STB21NM50N-1
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
中文描述: N溝道500V - 0.15ohm - 18A條TO-220/FP/D2/I2PAK/TO-247 MOSFET的第二代MDmesh
文件頁數(shù): 9/16頁
文件大?。?/td> 633K
代理商: STB21NM50N-1
9/16
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
TAPE AND REEL SHIPMENT
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
330
MIN.
MAX.
12.992
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
0.504
0795
0.960
3.937
13.2
0.520
26.4
1.039
30.4
1.197
BASE QTY
1000
BULK QTY
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
MAX.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
MIN.
0.413
0.618
0.059
0.062
0.065
0.449
0.189
0.153
0.468
0.075
1.574
0.0098 0.0137
0.933
MAX.
0.421
0.626
0.063
0.063
0.073
0.456
0.197
0.161
0.476
0.082
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
0.35
24.3
0.956
TAPE MECHANICAL DATA
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STB21NM60N 功能描述:MOSFET N-Ch 600 V 0.19 Ohm 17 A 2nd Gen MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB21NM60N- 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh? Power MOSFET
STB21NM60N-1 功能描述:MOSFET N-CHANNEL MFT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB21NM60ND 功能描述:MOSFET N-channel 600V, 17A FDMesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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