- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372324 > STB14NK60Z (意法半導體) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | STB14NK60Z |
| 廠商： | 意法半導體 |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 176K |
| 代理商： | STB14NK60Z |
1/11
June 2002
.
STB14NF10
STP14NF10 STP14NF10FP
N-CHANNEL 100V - 0.115
- 15A TO-220/TO-220FP/D
2
PAK
LOW GATE CHARGE STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.115
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE INTUBE(NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET
process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. Itis also intended for
any applications with low gate drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STB14NF10
STP14NF10
STP14NF10FP
100 V
100 V
100 V
<0.13
<0.13
<0.13
15 A
15 A
10 A
TO-220
1
2
3
TO-220FP
1
3
D
2
PAK
TO-263
(Suffix “T4”)
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limitedby safe operating area.
(1) I
SD
≤
14A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 50V
Parameter
Value
Unit
STB14NF10
STP14NF10
STP14NF10FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
100
100
±
20
V
V
V
A
A
A
W
15
10
60
60
0.4
10
6.3
40
25
0.17
W/
°
C
V/ns
mJ
V
dv/dt
(1)
E
AS(2)
V
ISO
T
stg
T
j
9
70
------
2000
-55 to 175
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| STB14NK60ZT4 | 30V N-Channel PowerTrench MOSFET |
| STB160NF03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 160A I(D) | TO-263AB |
| STB16NB25 | N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET |
| STB16NS25 | N-CHANNEL 250V - 0.23ohm - 16A D2PAK MESH OVERLAY⑩ MOSFET |
| STB16NB25T4 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-263AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB14NK60Z-1 | 制造商:STMicroelectronics 功能描述:MOSFECT N-CHANNEL 600V - 0.45?￡[ - 13.5A |
| STB14NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 13.5 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB14NM50N | 功能描述:MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB14NM65N | 功能描述:MOSFET N-Channel 650V 0.33 Ohms 12A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB15-0-0 | 制造商:TE Connectivity 功能描述:CABLE MARKER E SIZE15 0 PK50 制造商:TE Connectivity 功能描述:CABLE MARKER, E, SIZE15, 0, PK50 制造商:TE Connectivity 功能描述:CABLE MARKER, E, SIZE15, 0, PK50, Cable Diameter Min:5.8mm, Cable Diameter Max:8.5mm, Legend:0, Legend Colour:White, Marker Colour:Black, Marker Material:PVC (Polyvinyl Chloride), Operating Temperature Max:125C , RoHS Compliant: Yes |
發(fā)布緊急采購，3分鐘左右您將得到回復。