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參數(shù)資料
| 型號： | STB16NB25T4 |
| 廠商： | 意法半導體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直| 7A條（丁）|對263AB |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 153K |
| 代理商： | STB16NB25T4 |
1/9
February 2001
STB160NF03L
N-CHANNEL 30V - 0.0021
- 160A D2PAK
STripFET
POWER MOSFET
(1) Limited by Package
(2) I
SD
≤
100A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.0021
I
LOW THRESHOLD DRIVE
I
ULTRA LOW ON-RESISTANCE
I
VERY LOW GATE CHARGE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
“Single
Feature
APPLICATIONS
I
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
I
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(1)
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB160NF03L
30 V
< 0.0030
160 A
Parameter
Value
Unit
30
V
30
V
±
15
V
160
A
113
A
640
A
300
W
2
W/
°
C
J
E
AS
(2)
Single Pulse Avalanche Energy
2
T
stg
Storage Temperature
–65 to 175
°
C
°
C
T
j
Max. Operating Junction Temperature
175
D
2
PAK
(TO-263)
1
3
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB16NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET⑩ POWER MOSFET |
| STB16NF06L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.07Ω - 16A - D2PAK STripFET? Power MOSFET |
| STB16NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB16NF25 | 功能描述:MOSFET N-Ch 60 Volt 25 Amp Power Mosfet D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB16NK60Z-S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH⑩ MOSFET |
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