參數(shù)資料
型號： STB130NH02LT4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 90A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 90A型（?。﹟對263AB
文件頁數(shù)： 1/11頁
文件大?。?/td> 410K
代理商： STB130NH02LT4
1/11
September 2003
STB130NH02L
N-CHANNEL 24V - 0.0034
- 120A D
2PAK
STripFET III POWER MOSFET FOR DC-DC CONVERSION
I
TYPICAL R
DS
(on) = 0.0034
@ 10 V
I
TYPICAL R
DS
(on) = 0.005
@ 5 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB130NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET technology. It is
ideal in high performance DC-DC converter applications
where efficiency is to be achieved at very high output
currents.
APPLICATIONS
I
SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER
I
OR-ING DIODE
Ordering Information
SALES TYPE
STB130NH02LT4
TYPE
V
DSS
R
DS(on)
I
D
STB130NH02L
24 V
< 0.0044
90 A
(2)
MARKING
B130NH02L
PACKAGE
TO-263
PACKAGING
TAPE & REEL
1
3
D
2
PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D(2)
Drain Current (continuous) at T
C
= 25°C
I
D(2)
Drain Current (continuous) at T
C
= 100°C
I
DM(3)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS (4)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Parameter
Value
30
24
24
± 20
90
90
360
150
1
900
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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