參數(shù)資料
型號(hào)： STB13NK60Z-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
中文描述： N溝道600V的0.48ohm - 13A條TO-220/FP/D2PAK/I2PAK/TO-247齊納保護(hù)SuperMESH⑩功率MOSFET
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 410K
代理商： STB13NK60Z-1
1/11
September 2003
STB130NH02L
N-CHANNEL 24V - 0.0034
- 120A D
2PAK
STripFET III POWER MOSFET FOR DC-DC CONVERSION
I
TYPICAL R
DS
(on) = 0.0034
@ 10 V
I
TYPICAL R
DS
(on) = 0.005
@ 5 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB130NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET technology. It is
ideal in high performance DC-DC converter applications
where efficiency is to be achieved at very high output
currents.
APPLICATIONS
I
SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER
I
OR-ING DIODE
Ordering Information
SALES TYPE
STB130NH02LT4
TYPE
V
DSS
R
DS(on)
I
D
STB130NH02L
24 V
< 0.0044
90 A
(2)
MARKING
B130NH02L
PACKAGE
TO-263
PACKAGING
TAPE & REEL
1
3
D
2
PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D(2)
Drain Current (continuous) at T
C
= 25°C
I
D(2)
Drain Current (continuous) at T
C
= 100°C
I
DM(3)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS (4)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Parameter
Value
30
24
24
± 20
90
90
360
150
1
900
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STB13NK60 N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB13NK60ZT4 功能描述:MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB13NM50N 功能描述:MOSFET N Ch 600V 6A Hyper fast IGBT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB13NM50N_08 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 500 V - 0.250 Ω - 12 A MDmesh? II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK
STB13NM50N-1 功能描述:MOSFET N Ch 600V 6A Hyper fast IGBT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB13NM60N 功能描述:MOSFET POWER MOSFET N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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