參數(shù)資料
型號(hào)： STB10NK60Z-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
中文描述： N溝道600V的0.65ohm - 10A條TO-220/FP/D2PAK/I2PAK/TO-247齊納保護(hù)SuperMESH⑩功率MOSFET
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 684K
代理商： STB10NK60Z-1
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
10A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
E
AR
Repetitive Avalanche Energy
(Pulse with limited by T
j
max.)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Parameter
Value
TO-220FP
Unit
TO-220/
D
2
PAK/I
2
PAK
TO-247
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
10
10 (*)
10
A
5.7
5.7 (*)
5.7
A
Drain Current (pulsed)
36
36 (*)
36
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD
(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
115
35
156
W
0.92
0.28
1.25
W/°C
V
V
ESD(G-S)
4000
dv/dt (1)
V
ISO
T
j
T
stg
4.5
V/ns
V
Insulation Withstand Voltage (DC)
-
2500
-
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
I
2
PAK
D
2
PAK
TO-220FP
TO-247
Unit
Rthj-case
Rthj-pcb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature For
Soldering Purpose
1.09
3.6
0.8
°C/W
°C/W
60
Rthj-amb
62.5
50
°C/W
T
l
300
°C
Parameter
Max Value
9
Unit
A
300
mJ
3.5
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
(*) Limited only by maximum temperature allowed
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB10NK60ZT4 功能描述:MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB1106 制造商:SUPERWORLD 制造商全稱(chēng):Superworld Electronics 功能描述:SHIELDED SMD POWER INDUCTORS
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