參數(shù)資料
型號(hào)： STB10NC50-1
廠商： 意法半導(dǎo)體
英文描述： CAP OXI NIOB 47UF 10V 20% SMD
中文描述： ? -頻道500V - 0.48ohm - 10A條- I2PAK/D2PAK PowerMESH] MOSFET的
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 55K
代理商： STB10NC50-1
STB10NC50-1
N - CHANNEL 500V - 0.48
- 10A - I
2
PAK/D
2
PAK
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.48
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
December 1999
123
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
500
500
±
30
10
6.3
40
135
1.08
3
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
10 A, di/dt
≤
100 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
I
2
PAK
D
2
PAK
1
3
TYPE
V
DSS
R
DS(on)
< 0.52
I
D
STB10NC50-1
500 V
10 A
1/7
相關(guān)PDF資料
PDF描述
STB11NK50Z N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB120NF10 N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET
STP120NF10 N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET
STB120NH03L N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION
STB120NH03LT4 N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB10NK60Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STB10NK60Z_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH? Power MOSFET
STB10NK60Z_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V, 0.65 Ω, 10 A, SuperMESH? Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247
STB10NK60Z-1 功能描述:MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB10NK60ZT4 功能描述:MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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