參數(shù)資料
型號(hào)： STB120NH03LT4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION
中文描述： N溝道30V的- 0.005糯-第60A條采用D2PAK STripFET三功率MOSFET的DC - DC轉(zhuǎn)換
文件頁數(shù)： 1/11頁
文件大?。?/td> 421K
代理商： STB120NH03LT4
1/11
October 2003
STB120NH03L
N-CHANNEL 30V - 0.005
- 60A D
2
PAK
STripFET III POWER MOSFET FOR DC-DC CONVERSION
I
TYPICAL R
DS
(on) = 0.005
@ 10 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB120NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET technology. It is ideal
in high performance DC-DC converter applications where
efficiency is to be achieved at very high output currents.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC-DC
CONVERTERS
O
rdering Information
SALES TYPE
STB120NH03LT4
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(#)
Drain Current (continuous) at T
C
= 25°C
I
D
(#)
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
I
D
STB120NH03L
30 V
<0.0055
60 A(#)
MARKING
B120NH03L
PACKAGE
TO-252
PACKAGING
TAPE & REEL
1
3
D
2
PAK
TO-263
(Suffix “T4”)
(
)
Pulse width limited by safe operating area.
(#) Value limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 15V
Parameter
Value
30
30
± 20
60
60
240
115
0.77
700
Unit
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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