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參數(shù)資料
| 型號： | STA506 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 40V 4A QUAD POWER HALF BRIDGE |
| 中文描述： | 40V的4A條四重功率半橋 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 142K |
| 代理商： | STA506 |
STA506
4/14
Table 4. ABSOLUTE MAXIMUM RATINGS
Table 5.
(*)
RECOMMENDED OPERATING CONDITIONS
(*) performances not guaranteed beyond recommended operating conditions
Table 6. THERMAL DATA
Table 7. ELECTRICAL CHARACTERISTCS:
refer to circuit in Fig.1 (V
L
= 3.3V; V
CC
= 32V; R
L
= 8
;
fsw = 384KHz; T
amb
= 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Symbol
Parameter
Value
Unit
V
CE
DC Supply Voltage (Pin 4,7,12,15)
40
V
V
max
Maximum Voltage on pins 23 to 32 (logic reference)
5.5
V
P
tot
Power Dissipation (T
case
= 70°C)
50
W
T
op
Operating Temperature Range
0 to 70
°C
T
stg
, T
j
Storage and Junction Temperature
-40 to 150
°C
Symbol
V
CC
V
L
T
amb
Parameter
Min.
9.0
2.7
Typ.
Max.
36.0
5.0
Unit
V
v
DC Supply Voltage
Input Logic Reference
3.3
Ambient Temperature
0
70
°C
Symbol
T
j-case
T
jSD
T
warn
t
hSD
Parameter
Min.
Typ.
Max.
1.5
Unit
°C/W
°C
Thermal Resistance Junction to Case (thermal pad)
Thermal shut-down junction temperature
150
Thermal warning temperature
Thermal shut-down hysteresis
130
25
°C
°C
Min.
Typ.
Max.
Unit
R
dsON
Power Pchannel/Nchannel
MOSFET RdsON
Id=1A
200
270
m
I
dss
Power Pchannel/Nchannel
leakage Idss
V
CC
=35V
50
μ
A
g
N
Power Pchannel RdsON
Matching
Id=1A
95
%
g
P
Power Nchannel RdsON
Matching
Id=1A
95
%
Dt_s
Low current Dead Time (static)
see test circuit no.1; see fig. 3
10
20
ns
Dt_d
High current Dead Time (dinamic)
L=22
μ
H; C = 470nF; R
L
= 8
Id=3.5A; see fig. 5
50
ns
t
d ON
Turn-on delay time
Resistive load
100
ns
t
d OFF
Turn-off delay time
Resistive load
100
ns
t
r
Rise time
Resistive load; as fig.3
25
ns
t
f
Fall time
Resistive load; as fig. 3
25
ns
V
CC
Supply voltage operating voltage
9
36
V
V
IN-H
High level input voltage
V
L
/2
+300mV
V
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