- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385870 > ST6399 (意法半導(dǎo)體) MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4.1A; On-Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-1206; Leaded Process Compatible:No PDF資料下載
參數(shù)資料
| 型號(hào)： | ST6399 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4.1A; On-Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-1206; Leaded Process Compatible:No |
| 中文描述： | 8位微控制器HCMOS電視頻率合成帶OSD |
| 文件頁數(shù)： | 18/68頁 |
| 文件大?。?/td> | 560K |
| 代理商： | ST6399 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當(dāng)前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁
MEMORY SPACES
(Continued)
Data ROM Addressing.
Allthe read-only data are
physicallyimplementedin theROM inwhich thePro-
gramSpaceis alsoimplemented.TheROMtherefore
containstheprogramtobeexecutedandalsothecon-
stantsandthelook-uptablesneededfortheprogram.
ThelocationsofDataSpaceinwhichthedifferentcon-
stants and look-up tables are addressed by the
ST639xCore can be considered as being a 64-byte
window throughwhich it is possibleto accessto the
read-onlydatastoredintheROM.This window is lo-
catedfromthe40haddressto the7Fhaddressinthe
Dataspaceandallowsthedirect readingofthebytes
from the 000h address to the 03Fh address in the
ROM.All the bytesoftheROMcanbe usedto store
eitherinstructionsorread-onlydata.Indeed,thewin-
dowcanbemovedbystepof64bytesalongtheROM
in writing the appropriatecodein theWrite-onlyData
ROMWindowregister(DRWR, locationC9h).Theef-
fectiveaddressof thebytetobe readasa datainthe
ROM is obtained by the concatenationof the 6 less
significantbits of the address in the Data Space(as
lesssignificant bits) and thecontentoftheDRWR (as
most significant bits). So when addressing location
40hofdataspace,and0 isloadedintheDRWR, the
physicaladdressedlocationinROM is00h.
Note.
The dataROM window cannot addresswin-
dows abovethe 16k byte range.
DWR
Data ROMWindow Register
(C9h, Write Only)
D7 D6 D5 D4 D3 D2 D1 D0
DWR0 = Data ROMWindow 0
DWR1 = Data ROMWindow 1
DWR2 = Data ROMWindow 2
DWR3 = Data ROMWindow 3
DWR4 = Data ROMWindow 4
DWR5 = Data ROMWindow 5
DWR6 = Data ROMWindow 6
DWR7 = Data ROMWindow 7
Figure 16. Data ROM Window Register
DATA ROM
WINDOW REGISTER
CONTENTS
(DWR)
DATA SPACE ADDRESS
40h-7Fh
IN INSTRUCTION
PROGRAM SPACE ADDRESS
READ
6
5
4
3
2
0
5
4
3
2
1
0
5
4
3
2
1
0
1
6
7
8
9
10
11
0
1
VR01573B
12
1
0
DATA SPACE ADDRESS
59h
0
0
0
0
0
1
0
0
1
1
1
Example:
DWR=28h
1
1
0
0
0
0
0
0
0
0
1
ROM
ADDRESS:A19h
1
1
13
0
1
7
0
0
Figure17. Data ROM Window Memory Addressing
DWR7-DWR0.
These are the Data Rom Window
bits that correspond to the upper bits of data ROM
program space.This register is undefined after re-
set.
Note.
Careis requiredwhenhandlingtheDRWR as
it is write only. For this reason, it is not allowed to
change the DRWR contents while executing inter-
ruptsdrivers, asthe drivercannot saveand than re-
store its previous content.If it is impossibleto avoid
thewriting ofthisregisterin interruptsdrivers, anim-
ageofthisregistermustbesavedinaRAMlocation,
and each time the program writes the DRWR it
writes also the image register. The image register
must be written first, so if an interrupt occurs be-
tweenthe two instructionsthe DRWR register is not
affected.
ST6391,92,93,95,97,99
14/64
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST63P06 | 8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS |
| ST63P07 | 8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS |
| ST63P08 | MOSFET; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.9A; On-Resistance, Rds(on):0.055ohm; Rds(on) Test Voltage, Vgs:-4.5V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:8-1206 RoHS Compliant: Yes |
| ST63P16 | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:5.2A; On-Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-1206; Leaded Process Compatible:No RoHS Compliant: No |
| ST63P17 | 8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST6399B1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8-BIT HCMOS MCUs FOR TV FREQUENCY SYNTHESIS WITH OSD |
| ST63E126D1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8-BIT HCMOS MCUs FOR TV FREQUENCY & VOLTAGE SYNTHESIS WITH OSD |
| ST63E140D1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8-BIT HCMOS MCUs FOR TV FREQUENCY & VOLTAGE SYNTHESIS WITH OSD |
| ST63E142D1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8-BIT HCMOS MCUs FOR TV FREQUENCY & VOLTAGE SYNTHESIS WITH OSD |
| ST63E156D1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8-BIT HCMOS MCUs FOR TV FREQUENCY & VOLTAGE SYNTHESIS WITH OSD |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。