參數(shù)資料
型號: ST333S08PFL0
英文描述: Stratix GX FPGA 10K 8-FBGA
中文描述: 800V的518A逆變晶閘管采用TO - 209AE(至118)封裝
文件頁數(shù): 8/9頁
文件大?。?/td> 171K
代理商: ST333S08PFL0
ST333C..C Series
8
Bulletin I25170 rev. B 04/00
www.irf.com
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1 E2
1 E3
1 E4
1 E1
1 E2
1E3
1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pulse Basew idth (μs)
P
ST333C..C Series
Trapezoidal pulse
T = 40
°
C
di/dt = 100A/μs
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
s
DRM
5000
tp
1E4
1E2
1E3
1E4
1 E1
1E2
1E3
1 E4
1E4 1E 1
50 Hz
400
2500
100
1000
1500
2000
200
500
Pulse Base w idth (μs)
P
ST333C..C Series
Trapezoidal pulse
T = 40
°
C
di/dt = 50A/μs
3000
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
DRM
tp
5000
1 E2
1 E3
1 E4
50 Hz
400
100
Pulse Basew idth (μs)
1000
1500
2000
200
500
2500
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
DRM
ST333C..C Series
Trapezoidal pulse
T = 55
°
C
di/dt = 100A/μs
3000
5000
tp
1E1
1E1
1E1
1E 2
1 E3
1 E4
50 Hz
400
100
Pulse Basew idth (μs)
1000
1500
2000
200
500
ST333C..C Series
Trapezoidal pulse
T = 55
°
C
di/dt = 100A/μs
2500
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
DRM
tp
3000
5000
1E1
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Base w idth (μs)
20 joules per pulse
2
1
0.5
0.3
0.2
10
5
P
3
ST333C..C Series
Sinusoidal pulse
tp
1E4 1 E1
1E2
1 E3
1E4
Pulse Basew idth (μs)
20 joules per pulse
10
5
2
1
0.5
0.3
0.2
3
ST333C Series
Rectangular pulse
di/dt = 50A/μs
0.4
tp
1E1
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