參數(shù)資料
型號: ST3230C16R0
英文描述: Stratix II GX FPGA 30K FPGA-780
中文描述: 1600V 2785A可控硅相位控制在阿- 36(注冊商標,北辰)封裝
文件頁數(shù): 3/6頁
文件大小: 79K
代理商: ST3230C16R0
ST3230C..R Series
3
Bulletin I25200 rev. 04/00
www.irf.com
dv/dt
Maximum linear rate of rise of
off-state voltage
I
RRM
I
DRM
Max. peak reverse and off-state
leakage current
500
V/μs
T
J
= T
J
max. to 67% rated V
DRM
Parameter
ST3230C..R
Units
Conditions
250
mA
T
J
= 125
°
C rated V
DRM
/V
RRM
applied
Triggering
P
GM
Maximum peak gate power
150
t
p
= 100μs
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
30
A
Anode positive with respect to cathode
V
GM
Max. peak positive gate voltage
30
V
Anode positive with respect to cathode
-V
GM
Max. peak negative gate voltage
0.25
V
Anode negative with respect to cathode
I
GT
Maximum DC gate current
required to trigger
V
GT
Maximum gate voltage required
to trigger
Parameter
ST3230C..R
Units
Conditions
W
400
mA
T
C
= 25
°
C, V
DRM
= 5V
4
V
T
C
= 25
°
C, V
DRM
= 5V
V
GD
DC gate voltage not to trigger
0.25
V
T
C
= 125
°
C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
180
°
0.0010
0.0010
T
J
= T
J
max.
120
°
60
°
0.0017
0.0044
0.0017
0.0044
K/W
R
thJ-C
Conduction
(The following table shows the increment of thermal resistence R
thJ-C
when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
Units
Conditions
T
J
max. Max. operating temperature
T
stg
R
thJ-C
to case
125
On-state (conducting)
Max. storage temperature range
-55 to 125
Thermal resistance, junction
0.019
0.0095
DC operation single side cooled
DC operation double side cooled
R
th(C-h)
Thermal resistance, case
to heatsink
0.004
0.002
43000
(4400)
Single side cooled
Double side cooled
F
Mounting force ± 10%
wt
Approximate weight
1600
g
Case style
(R-PUK)
See Outline Table
Parameter
ST3230C..R
Units
Conditions
Thermal and Mechanical Specification
°
C
Clamping force 43KN with
mounting compound
N
(Kg)
Blocking
K/W
K/W
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